5961-01-608-4141
Find complete technical information, availability, and procurement data for: 5961-01-608-4141
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
175.0 celsius ambient air maximum operating temp per measurement point, 100.0 maximum drain to source voltage voltage rating in volts per characteristic, 20.0 amperes maximum drain current current rating per characteristic, 20a, 100v, 0.054 ohm, n-channel, logic level ultrafet power mosfet part name assigned by controlling agency, terminal mounting method
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Mounting Method
- terminal
- Voltage Rating In Volts Per Characteristic
- 100.0 maximum drain to source voltage
- Current Rating Per Characteristic
- 20.0 amperes maximum drain current
- Maximum Operating Temp Per Measurement Point
- 175.0 celsius ambient air
- Part Name Assigned By Controlling Agency
- 20a, 100v, 0.054 ohm, n-channel, logic level ultrafet power mosfet
- Special Features
- maxtemp rating for soldering - leads at 0.063in (1.6mm) from case for 10 seconds at 300 deg c; gate to source voltage +/- 16 v max rating
Related Parts
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| Part Number | Name |
|---|---|
| HUF76629D3S | Transistor |
FAQs
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When the NSN 5961-01-608-4141 was assigned to the Federal Catalog?
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