5961-01-469-0535
Find complete technical information, availability, and procurement data for: 5961-01-469-0535
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unthreaded hole mounting method, 6625-15-064-3505 test set electronics systems x925-501 end item identification, 1.325 inches nominal overall diameter, 2 mounting facility quantity, 0.410 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Overall Length
- 0.410 inches maximum
- Overall Diameter
- 1.325 inches nominal
- End Item Identification
- 6625-15-064-3505 test set electronics systems x925-501
- Mounting Facility Quantity
- 2
- Mounting Method
- unthreaded hole
- Features Provided
- hermetically sealed case
- Voltage Rating In Volts Per Characteristic
- 14.0 maximum nominal regulator voltage
- Current Rating Per Characteristic
- 890.00 milliamperes maximum maximum reverse surge current
- Power Rating Per Characteristic
- 50.0 watts maximum total power dissipation
- Special Features
- same as 1n2812b but with different quality level
- Material
- silicon semiconductor
- Terminal Type And Quantity
- 2 pin
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| JAN1N2812B | Diode Semiconductor Device |
FAQs
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When the NSN 5961-01-469-0535 was assigned to the Federal Catalog?
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