5961-01-351-1946
Find complete technical information, availability, and procurement data for: 5961-01-351-1946
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
to-116 joint electronic device engineering council/jedec/case outline designation, 0.325 inches maximum overall width, unable to decode inclosure material, 0.200 inches maximum overall height, 0.660 inches minimum and 0.785 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.660 inches minimum and 0.785 inches maximum
- Overall Height
- 0.200 inches maximum
- Overall Width
- 0.325 inches maximum
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-116
- Component Name And Quantity
- 4 transistor
- Mounting Method
- terminal
- Semiconductor Material
- silicon all semiconductor
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum breakdown voltage, collector-to-emitter, base open and 40.0 maximum working peak off-state voltage all semiconductor
- Current Rating Per Characteristic
- 0.50 milliamperes maximum drain current all semiconductor
- Power Rating Per Characteristic
- 1900.0 milliwatts maximum nonreactive power input, instantaneous total, to all terminals all semiconductor
- Maximum Operating Temp Per Measurement Point
- -65.0 celsius case and 175.0 celsius case
- Special Features
- all transistor junction pattern arrangement: pnp
- Terminal Type And Quantity
- 14 pin
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FAQs
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When the NSN 5961-01-351-1946 was assigned to the Federal Catalog?
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