5961-01-340-8745
Find complete technical information, availability, and procurement data for: 5961-01-340-8745
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A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes:light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
0.388 inches maximum overall width, 2 mounting facility quantity, 0.905 inches maximum overall length, 0.205 inches minimum and 0.235 inches maximum overall height, unable to decode or unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode or unable to decode
- Overall Length
- 0.905 inches maximum
- Overall Height
- 0.205 inches minimum and 0.235 inches maximum
- Overall Width
- 0.388 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Mounting Method
- slot
- Criticality Code Justification
- feat
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 65.0 maximum collector to emitter reverse voltage and 65.0 maximum collector to base voltage/static/emitter open and 3.5 maximum emitter to base voltage, static, collector open
- Current Rating Per Characteristic
- 21.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 750.0 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- nuclear hardness critical item; junction pattern arrangement: pn
- Terminal Type And Quantity
- 2 ribbon
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| 142351-0004 | Transistor |
| NH142351-0004 | Transistor |
| RXB12350YM | Transistor |
FAQs
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When the NSN 5961-01-340-8745 was assigned to the Federal Catalog?
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