5961-01-332-9506
Find complete technical information, availability, and procurement data for: 5961-01-332-9506
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
unable to decode inclosure material, 2 mounting facility quantity, 1.030 inches maximum overall width, 1.540 inches maximum overall length, 0.312 inches maximum overall height
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 1.540 inches maximum
- Overall Height
- 0.312 inches maximum
- Overall Width
- 1.030 inches maximum
- Mounting Facility Quantity
- 2
- Electrode Internally-Electrically Connected To Case
- anode
- Mounting Method
- unthreaded hole
- Features Provided
- burn in
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 200.0 maximum repetitive peak off-state voltage and 200.0 maximum repetitive peak reverse voltage
- Current Rating Per Characteristic
- 25.00 amperes maximum on-state current, rms total and 260.00 amperes maximum peak nonrepetitive surge current
- Power Rating Per Characteristic
- 5.0 watts maximum peak gate power dissipation and 0.5 watts maximum average gate power-forward
- Maximum Operating Temp Per Measurement Point
- 125.0 celsius junction
- Terminal Type And Quantity
- 2 pin and 1 case
Related Parts
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| Part Number | Name |
|---|---|
| 560-0294-001 | Thyristor Semiconductor Device |
| T235A391-1 | Thyristor Semiconductor Device |
FAQs
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When the NSN 5961-01-332-9506 was assigned to the Federal Catalog?
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