MFE990
View detailed technical data, stock status, and sourcing information for: MFE990
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
to-205ad joint electronic device engineering council/jedec/case outline designation, field effect internal configuration, 2.00 amperes nominal drain current and 10.00 microamperes maximum zero-gate-voltage drain current and 50.00 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate and 2.00 amperes nominal forward current, total rms current rating per characteristic, 30.0 nominal gate to source voltage and 90.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 3.5 maximum gate to source threshold voltage and 1.2 nominal forward gate to source breakdown voltage voltage rating in volts per characteristic, silicon semiconductor material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Internal Configuration
- field effect
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-205ad
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 30.0 nominal gate to source voltage and 90.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 3.5 maximum gate to source threshold voltage and 1.2 nominal forward gate to source breakdown voltage
- Current Rating Per Characteristic
- 2.00 amperes nominal drain current and 10.00 microamperes maximum zero-gate-voltage drain current and 50.00 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate and 2.00 amperes nominal forward current, total rms
- Power Rating Per Characteristic
- 6.25 watts nominal total device dissipation
- Terminal Type And Quantity
- 3 uninsulated wire lead
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| MFE990 | Transistor |
FAQs
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What is the FSCG of the NSN 5961-01-322-0511?
Does the NSN 5961-01-322-0511 have a Schedule B code assigned?
Does NSN 5961-01-322-0511 require demilitarization?
Does NSN 5961-01-322-0511 contain precious materials?
Does NSN 5961-01-322-0511 contain hazardous materials?
When the NSN 5961-01-322-0511 was assigned to the Federal Catalog?
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