5961-01-307-7627
Find complete technical information, availability, and procurement data for: 5961-01-307-7627
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A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes:light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
field effect internal configuration, 6625-01-018-8584 generator,signal end item identification, 300.0 milliwatts maximum total device dissipation power rating per characteristic, silicon semiconductor material, 3.00 milliamperes minimum zero-gate-voltage drain current and 10.00 milliamperes maximum zero-gate-voltage drain current and 1.00 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate current rating per characteristic
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- End Item Identification
- 6625-01-018-8584 generator,signal
- Internal Configuration
- field effect
- Semiconductor Material
- silicon
- Current Rating Per Characteristic
- 3.00 milliamperes minimum zero-gate-voltage drain current and 10.00 milliamperes maximum zero-gate-voltage drain current and 1.00 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate
- Power Rating Per Characteristic
- 300.0 milliwatts maximum total device dissipation
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