5961-01-236-4438
Find complete technical information, availability, and procurement data for: 5961-01-236-4438
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
nuclear hardness critical and electrostatic discharge sensitive item special features, 3.0 maximum breakdown voltage, emitter-to-base, collector open voltage rating in volts per characteristic, 0.280 inches nominal overall length, silicon semiconductor material, feat criticality code justification
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Overall Length
- 0.280 inches nominal
- Criticality Code Justification
- feat
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 3.0 maximum breakdown voltage, emitter-to-base, collector open
- Special Features
- nuclear hardness critical and electrostatic discharge sensitive item
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 280-21051-101 | Transistor |
FAQs
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Does the NSN 5961-01-236-4438 have a Schedule B code assigned?
Does NSN 5961-01-236-4438 require demilitarization?
Does NSN 5961-01-236-4438 contain precious materials?
Does NSN 5961-01-236-4438 contain hazardous materials?
When the NSN 5961-01-236-4438 was assigned to the Federal Catalog?
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