5961-01-143-7249
Find complete technical information, availability, and procurement data for: 5961-01-143-7249
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
2.00 amperes maximum collector current, dc and 1.00 amperes maximum base current, dc current rating per characteristic, junction contact internal configuration, silicon semiconductor material, 200.0 maximum collector to base voltage/static/emitter open and 150.0 maximum collector to emitter voltage/static/base open and 175.0 maximum collector to emitter reverse voltage voltage rating in volts per characteristic, 1.0 watts maximum total power dissipation power rating per characteristic
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Internal Configuration
- junction contact
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 200.0 maximum collector to base voltage/static/emitter open and 150.0 maximum collector to emitter voltage/static/base open and 175.0 maximum collector to emitter reverse voltage
- Current Rating Per Characteristic
- 2.00 amperes maximum collector current, dc and 1.00 amperes maximum base current, dc
- Power Rating Per Characteristic
- 1.0 watts maximum total power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Special Features
- junction pattern arrangement: npn
Related Parts
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| Part Number | Name |
|---|---|
| BUX66 | Transistor |
FAQs
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When the NSN 5961-01-143-7249 was assigned to the Federal Catalog?
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