5961-01-071-9881
Find complete technical information, availability, and procurement data for: 5961-01-071-9881
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
200.0 celsius junction maximum operating temp per measurement point, 36.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 4.0 maximum collector to emitter voltage/static/base open and 18.0 maximum emitter to base voltage, static, collector open voltage rating in volts per characteristic, unable to decode inclosure material, 20.00 amperes maximum collector current, dc current rating per characteristic, 220.0 watts maximum total power dissipation power rating per characteristic
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Voltage Rating In Volts Per Characteristic
- 36.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 4.0 maximum collector to emitter voltage/static/base open and 18.0 maximum emitter to base voltage, static, collector open
- Current Rating Per Characteristic
- 20.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 220.0 watts maximum total power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| BM-70-12 | Transistor |
FAQs
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