5961-01-067-4961
Find complete technical information, availability, and procurement data for: 5961-01-067-4961
DODParts.com distributes related products varnishes dopes paints, aircraft parts and consumables, electrical parts, fittings and other components for the aerospace and defense industries. Submit the short price quote form for NSN 5961-01-067-4961 to receive an up to date pricing and availability quote by email.
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes:semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
0.250 inches nominal overall width, 0.200 inches nominal overall height, unable to decode or unable to decode inclosure material, 4 transistor component name and quantity, 0.785 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode or unable to decode
- Overall Length
- 0.785 inches maximum
- Overall Height
- 0.200 inches nominal
- Overall Width
- 0.250 inches nominal
- Component Name And Quantity
- 4 transistor
- Mounting Method
- press fit
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon all transistor
- Voltage Rating In Volts Per Characteristic
- -40.0 maximum collector to base voltage, dc and -40.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, instantaneous all transistor
- Current Rating Per Characteristic
- -1.00 amperes maximum collector current, dc all transistor
- Power Rating Per Characteristic
- 6.3 watts maximum total device dissipation all transistor
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- all transistor junction pattern arrangement: pnp
- Terminal Type And Quantity
- 14 ribbon
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 44-054259-02 | Unitized Semiconductor Devices |
| DH34670/883B | Unitized Semiconductor Devices |
| HQ3467 | Unitized Semiconductor Devices |
FAQs
Find helpful answers about installation, operation, maintenance, compliance, and troubleshooting.
What is the FSCG of the NSN 5961-01-067-4961?
Does the NSN 5961-01-067-4961 have a Schedule B code assigned?
Does NSN 5961-01-067-4961 require demilitarization?
Does NSN 5961-01-067-4961 contain precious materials?
Does NSN 5961-01-067-4961 contain hazardous materials?
When the NSN 5961-01-067-4961 was assigned to the Federal Catalog?
Professional Distribution
Certified to meet the strict requirements of defense, aerospace, and hazardous materials distribution.
- ITAR Registered
- DDTC Registered
- HAZMAT Certified
- AS9120 Quality Standards
- 100% Quality Inspections
You May Also Like
Browse other in-demand NSN parts sourced by professionals in defense, aerospace, and manufacturing sectors. Each component meets strict standards for quality and performance.
Pricing
Submit your request below and our team will respond quickly with up-to-date pricing, delivery estimates, and stock information:
