5961-01-004-3996
Find complete technical information, availability, and procurement data for: 5961-01-004-3996
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.500 inches minimum terminal length, unable to decode inclosure material, 0.209 inches minimum and 0.230 inches maximum overall diameter, field effect-dual gate internal configuration, 0.170 inches minimum and 0.210 inches maximum overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.170 inches minimum and 0.210 inches maximum
- Terminal Length
- 0.500 inches minimum
- Overall Diameter
- 0.209 inches minimum and 0.230 inches maximum
- Internal Configuration
- field effect-dual gate
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.100 inches nominal
- Features Provided
- electrostatic sensitive
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 30.0 maximum drain to gate voltage and 25.0 maximum drain to source voltage
- Current Rating Per Characteristic
- 50.00 milliamperes maximum drain current
- Power Rating Per Characteristic
- 360.0 milliwatts maximum total power dissipation
- Terminal Type And Quantity
- 4 uninsulated wire lead
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| Part Number | Name |
|---|---|
| 615238-901 | Transistor |
FAQs
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When the NSN 5961-01-004-3996 was assigned to the Federal Catalog?
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