SSC3145
View detailed technical data, stock status, and sourcing information for: SSC3145
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
to-5 joint electronic device engineering council/jedec/case outline designation, 1.500 inches minimum terminal length, 0.370 inches maximum overall diameter, 0.260 inches maximum overall length, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.260 inches maximum
- Terminal Length
- 1.500 inches minimum
- Overall Diameter
- 0.370 inches maximum
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-5
- Electrode Internally-Electrically Connected To Case
- collector
- Component Name And Quantity
- 2 transistor
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.203 inches maximum
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon all transistor
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum collector to base voltage, dc and 45.0 maximum collector to emitter voltage, dc and 6.0 maximum emitter to base voltage, dc all transistor
- Power Rating Per Characteristic
- 1.2 watts maximum total power dissipation all transistor
- Maximum Operating Temp Per Measurement Point
- 175.0 celsius junction
- Special Features
- all transistor junction pattern arrangement: pnp
- Terminal Type And Quantity
- 6 uninsulated wire lead
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FAQs
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What is the FSCG of the NSN 5961-00-998-5607?
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Does NSN 5961-00-998-5607 require demilitarization?
Does NSN 5961-00-998-5607 contain precious materials?
Does NSN 5961-00-998-5607 contain hazardous materials?
When the NSN 5961-00-998-5607 was assigned to the Federal Catalog?
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