5961-00-837-7064
Find complete technical information, availability, and procurement data for: 5961-00-837-7064
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A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes:light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
1 mounting facility quantity, junction contact internal configuration, to-64 joint electronic device engineering council/jedec/case outline designation, 0.885 inches maximum overall length, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.885 inches maximum
- Mounting Facility Quantity
- 1
- Internal Configuration
- junction contact
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-64
- Mounting Method
- threaded stud
- Overall Width Across Flats
- 0.437 inches maximum
- Nominal Thread Size
- 0.190 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 50.0 maximum repetitive peak off-state voltage and 1.8 maximum on-state voltage, dc
- Current Rating Per Characteristic
- 4.70 amperes maximum on-state current, dc and 80.00 milliamperes maximum holding current, dc
- Maximum Operating Temp Per Measurement Point
- 159.0 celsius case
- Special Features
- junction pattern arrangement: pnpn
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 2 tab, solder lug and 1 threaded stud
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| 2N1771A(C10F) | Thyristor Semiconductor Device |
| 2N1771APARENC10F | Thyristor Semiconductor Device |
| 353-1989-000 | Thyristor Semiconductor Device |
| 353-1989-001 | Thyristor Semiconductor Device |
| C10F | Thyristor Semiconductor Device |
FAQs
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When the NSN 5961-00-837-7064 was assigned to the Federal Catalog?
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