5961-00-404-5599
Find complete technical information, availability, and procurement data for: 5961-00-404-5599
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
2 mounting facility quantity, unable to decode inclosure material, junction contact internal configuration, 0.297 inches nominal overall length, 0.620 inches maximum overall diameter
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.297 inches nominal
- Overall Diameter
- 0.620 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- unthreaded hole
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 1.00 amperes maximum base current, dc and 1.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 25.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: pnp
- Terminal Type And Quantity
- 2 uninsulated wire lead and 1 case
- Specification/Standard Data
- 80131-re.ease5443 professional/industrial association specification
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FAQs
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