5961-00-350-1359
Find complete technical information, availability, and procurement data for: 5961-00-350-1359
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
silicon semiconductor material, unable to decode inclosure material, 40.0 maximum collector to emitter voltage/static/base open voltage rating in volts per characteristic, terminal mounting method, 0.883 inches nominal overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.883 inches nominal
- Mounting Method
- terminal
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 40.0 maximum collector to emitter voltage/static/base open
- Current Rating Per Characteristic
- 250.00 milliamperes maximum collector current, dc
- Power Rating Per Characteristic
- 13.5 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Terminal Type And Quantity
- 3 uninsulated wire lead
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 351239 | Transistor |
FAQs
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When the NSN 5961-00-350-1359 was assigned to the Federal Catalog?
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