5961-00-261-6537
Find complete technical information, availability, and procurement data for: 5961-00-261-6537
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unable to decode inclosure material, 0.210 inches maximum overall length, junction contact internal configuration, 0.500 inches minimum terminal length, 0.230 inches maximum overall diameter
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.210 inches maximum
- Terminal Length
- 0.500 inches minimum
- Overall Diameter
- 0.230 inches maximum
- Internal Configuration
- junction contact
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.100 inches nominal
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 20.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 30.00 milliamperes maximum collector current, dc
- Power Rating Per Characteristic
- 150.0 milliwatts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 4 uninsulated wire lead
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| Part Number | Name |
|---|---|
| 5519022G001 | Transistor |
| MA42615 | Transistor |
FAQs
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When the NSN 5961-00-261-6537 was assigned to the Federal Catalog?
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