5961-00-133-2806
Find complete technical information, availability, and procurement data for: 5961-00-133-2806
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.375 inches nominal overall length, 2 mounting facility quantity, 0.875 inches maximum overall diameter, junction contact internal configuration, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.375 inches nominal
- Overall Diameter
- 0.875 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- unthreaded hole
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 40.0 maximum collector to emitter voltage/static/base open and 50.0 maximum collector to base voltage, dc and 7.0 maximum emitter to base voltage, instantaneous
- Current Rating Per Characteristic
- 7.00 amperes maximum base current, dc and 15.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 115.0 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 2 uninsulated wire lead and 1 case
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FAQs
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When the NSN 5961-00-133-2806 was assigned to the Federal Catalog?
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