5961-00-122-8673
Find complete technical information, availability, and procurement data for: 5961-00-122-8673
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.348 inches nominal overall diameter, unable to decode inclosure material, 1 mounting facility quantity, junction contact internal configuration, 0.394 inches nominal overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.394 inches nominal
- Overall Diameter
- 0.348 inches nominal
- Mounting Facility Quantity
- 1
- Internal Configuration
- junction contact
- Mounting Method
- threaded stud
- Features Provided
- hermetically sealed case
- Overall Width Across Flats
- 0.437 inches nominal
- Nominal Thread Size
- 0.190 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open and 8.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 5.00 amperes maximum collector current, dc and 500.00 milliamperes maximum base current, dc
- Power Rating Per Characteristic
- 30.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 1 threaded stud and 3 tab, solder lug
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| 1261915-154 | Transistor |
| 2N3746 | Transistor |
| RELEASE4995 | Transistor |
FAQs
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When the NSN 5961-00-122-8673 was assigned to the Federal Catalog?
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