5961-00-114-5228
Find complete technical information, availability, and procurement data for: 5961-00-114-5228
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A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
threaded stud mounting method, anode electrode internally-electrically connected to case, 2.500 inches maximum overall length, 1 mounting facility quantity, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 2.500 inches maximum
- Mounting Facility Quantity
- 1
- Electrode Internally-Electrically Connected To Case
- anode
- Mounting Method
- threaded stud
- Features Provided
- hermetically sealed case
- Overall Width Across Flats
- 1.031 inches minimum and 1.063 inches maximum
- Nominal Thread Size
- 0.500 inches
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 800.0 maximum breakover voltage, dc
- Current Rating Per Characteristic
- 110.00 amperes maximum drain current
- Power Rating Per Characteristic
- 500.0 milliwatts maximum total power dissipation
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 2 tab, solder lug and 1 threaded stud
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| C50N | Thyristor Semiconductor Device |
FAQs
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When the NSN 5961-00-114-5228 was assigned to the Federal Catalog?
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