5961-00-104-8612
Find complete technical information, availability, and procurement data for: 5961-00-104-8612
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
0.260 inches maximum overall length, 0.500 inches minimum terminal length, 0.335 inches maximum overall diameter, communications and data systems. b-52 stratofortress, s-3b viking aircraft end item identification, unable to decode inclosure material
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.260 inches maximum
- Terminal Length
- 0.500 inches minimum
- Overall Diameter
- 0.335 inches maximum
- End Item Identification
- communications and data systems. b-52 stratofortress, s-3b viking aircraft
- Component Name And Quantity
- 2 transistor
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.200 inches nominal
- Features Provided
- hermetically sealed case
- Criticality Code Justification
- feat
- Semiconductor Material
- silicon all transistor
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum emitter to base voltage, static, collector open all transistor
- Current Rating Per Characteristic
- 50.00 milliamperes maximum collector current, dc all transistor
- Power Rating Per Characteristic
- 500.0 milliwatts maximum total power dissipation all transistor
- Transfer Ratio
- 150.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter all transistor
- Special Features
- weapon system essential. features - all transistor junction pattern arrangement: pnp.
- Terminal Type And Quantity
- 7 uninsulated wire lead
- Specification/Standard Data
- 80131-release5128 professional/industrial association specification
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 2N3806 | Unitized Semiconductor Devices |
| RELEASE5128 | Unitized Semiconductor Devices |
FAQs
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Does NSN 5961-00-104-8612 require demilitarization?
Does NSN 5961-00-104-8612 contain precious materials?
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When the NSN 5961-00-104-8612 was assigned to the Federal Catalog?
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