5961-00-061-2987
Find complete technical information, availability, and procurement data for: 5961-00-061-2987
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
junction contact internal configuration, 1.110 inches nominal overall diameter, 1 mounting facility quantity, unable to decode inclosure material, 0.750 inches nominal overall length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.750 inches nominal
- Overall Diameter
- 1.110 inches nominal
- Mounting Facility Quantity
- 1
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- threaded stud
- Features Provided
- hermetically sealed case
- Nominal Thread Size
- 0.250 inches
- Semiconductor Material
- germanium
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum breakdown voltage, collector-to-base, emitter open and 35.0 maximum breakdown voltage, collector-to-emitter, base open
- Current Rating Per Characteristic
- 2.50 amperes maximum collector current, dc
- Maximum Operating Temp Per Measurement Point
- 95.0 celsius junction
- Special Features
- junction pattern arrangement: pnp
- Thread Series Designator
- unf
- Terminal Type And Quantity
- 2 tab, solder lug and 1 case
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|---|---|
| 352-0320-00 | Transistor |
| 352-0320-000 | Transistor |
| DA3F3 | Transistor |
FAQs
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Does NSN 5961-00-061-2987 contain precious materials?
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When the NSN 5961-00-061-2987 was assigned to the Federal Catalog?
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