SD8006H
View detailed technical data, stock status, and sourcing information for: SD8006H
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Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes:devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes:network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.
unable to decode inclosure material, 0.370 inches maximum overall diameter, to-5 joint electronic device engineering council/jedec/case outline designation, 0.260 inches maximum overall length, 1.500 inches minimum terminal length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.260 inches maximum
- Terminal Length
- 1.500 inches minimum
- Overall Diameter
- 0.370 inches maximum
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-5
- Electrode Internally-Electrically Connected To Case
- collector
- Component Name And Quantity
- 2 transistor
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.200 inches nominal
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon all transistor
- Voltage Rating In Volts Per Characteristic
- 60.0 maximum collector to base voltage/static/emitter open and 40.0 maximum collector to emitter voltage/static/base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open all transistor
- Current Rating Per Characteristic
- 10.00 microamperes maximum collector current, dc all transistor
- Power Rating Per Characteristic
- 3.0 watts maximum total device dissipation all transistor
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- all transistor junction pattern arrangement: npn
- Precious Material And Location
- terminal surfaces gold
- Precious Material
- gold
- Terminal Type And Quantity
- 6 uninsulated wire lead
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| C532000361 | Unitized Semiconductor Devices |
| ND20359 | Unitized Semiconductor Devices |
| NS7386 | Unitized Semiconductor Devices |
| SA2731 | Unitized Semiconductor Devices |
| SD8006H | Unitized Semiconductor Devices |
| TX2N2222DUAL | Unitized Semiconductor Devices |
| TXGT7129 | Unitized Semiconductor Devices |
FAQs
Find helpful answers about installation, operation, maintenance, compliance, and troubleshooting.
What is the FSCG of the NSN 5961-00-021-9057?
Does the NSN 5961-00-021-9057 have a Schedule B code assigned?
Does NSN 5961-00-021-9057 require demilitarization?
Does NSN 5961-00-021-9057 contain precious materials?
Does NSN 5961-00-021-9057 contain hazardous materials?
When the NSN 5961-00-021-9057 was assigned to the Federal Catalog?
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