5961-00-009-5518
Find complete technical information, availability, and procurement data for: 5961-00-009-5518
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.370 inches maximum overall diameter, silicon semiconductor material, 0.200 inches minimum and 0.260 inches maximum overall height, hermetically sealed case features provided, junction contact internal configuration
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Overall Height
- 0.200 inches minimum and 0.260 inches maximum
- Overall Diameter
- 0.370 inches maximum
- Internal Configuration
- junction contact
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 110.0 maximum collector to base voltage/static/emitter open and 110.0 maximum collector to emitter voltage/static/base open and 110.0 maximum emitter to base voltage, static, collector open
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: pnp
- Terminal Type And Quantity
- 3 uninsulated wire lead
Related Parts
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| Part Number | Name |
|---|---|
| 386MR031P002 | Transistor |
FAQs
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When the NSN 5961-00-009-5518 was assigned to the Federal Catalog?
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