5962-01-491-2679
Find complete technical information, availability, and procurement data for: 5962-01-491-2679
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high speed and low power and asynchronous features provided, ceramic inclosure material, -55.0 to 125.0 celsius operating temp range, radar threat emitter an/mst-t1; m3p reu-l end item identification, -65.0 to 155.0 celsius storage temp range
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Operating Temp Range
- -55.0 to 125.0 celsius
- Storage Temp Range
- -65.0 to 155.0 celsius
- End Item Identification
- radar threat emitter an/mst-t1; m3p reu-l
- Features Provided
- high speed and low power and asynchronous
- Inclosure Material
- ceramic
- Inclosure Configuration
- dual-in-line
- Output Logic Form
- complementary-metal oxide-semiconductor logic
- Part Name Assigned By Controlling Agency
- cmos asynchronous fifo
- Voltage Rating And Type Per Characteristic
- -0.5 volts minimum power source and 7.0 volts maximum power source
- Time Rating Per Chacteristic
- 20.00 nanoseconds nominal access
- Memory Device Type
- first-in first-out
- Special Features
- 2,048 x 9-bit; thin ceramic dip
- Test Data Document
- 96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
- Terminal Type And Quantity
- 28 printed circuit
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| Part Number | Name |
|---|---|
| 1DT203L20TDB | Memory Microcircuit |
| 2009657-001 | Memory Microcircuit |
| IDT203L20TDB | Memory Microcircuit |
| IDT7203L20TDB | Memory Microcircuit |
FAQs
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Does the NSN 5962-01-491-2679 have a Schedule B code assigned?
Does NSN 5962-01-491-2679 require demilitarization?
Does NSN 5962-01-491-2679 contain precious materials?
Does NSN 5962-01-491-2679 contain hazardous materials?
When the NSN 5962-01-491-2679 was assigned to the Federal Catalog?
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