5962-01-398-5110
Find complete technical information, availability, and procurement data for: 5962-01-398-5110
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A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes:semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.
dual-in-line inclosure configuration, 5.0 volts nominal power source voltage rating and type per characteristic, -55.0 to 125.0 celsius operating temp range, nxt assy:8501830-951 sys:4040859-953 end item identification, programmed 2048 x 8 prom part name assigned by controlling agency
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Operating Temp Range
- -55.0 to 125.0 celsius
- End Item Identification
- nxt assy:8501830-951 sys:4040859-953
- Inclosure Configuration
- dual-in-line
- Part Name Assigned By Controlling Agency
- programmed 2048 x 8 prom
- Voltage Rating And Type Per Characteristic
- 5.0 volts nominal power source
- Time Rating Per Chacteristic
- 100.00 nanoseconds maximum input to output access
- Memory Device Type
- rom
- Terminal Type And Quantity
- 24 printed circuit
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 8501829-168 | Memory Microcircuit |
FAQs
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When the NSN 5962-01-398-5110 was assigned to the Federal Catalog?
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