5962-01-386-3127
Find complete technical information, availability, and procurement data for: 5962-01-386-3127
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
electrostatic sensitive and programmed features provided, -55.0 to 125.0 celsius operating temp range, ceramic inclosure material, 960.0 milliwatts maximum power dissipation rating, -65.0 to 150.0 celsius storage temp range
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Maximum Power Dissipation Rating
- 960.0 milliwatts
- Operating Temp Range
- -55.0 to 125.0 celsius
- Storage Temp Range
- -65.0 to 150.0 celsius
- Features Provided
- electrostatic sensitive and programmed
- Inclosure Material
- ceramic
- Inclosure Configuration
- dual-in-line
- Case Outline Source And Designator
- d-3 mil-m-38510
- Terminal Surface Treatment
- solder
- Voltage Rating And Type Per Characteristic
- 7.0 volts maximum power source
- Memory Device Type
- prom
- Nuclear Hardness Critical Feature
- hardened
- Test Data Document
- 96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
- Terminal Type And Quantity
- 24 printed circuit
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 295A6403G4 | Memory Microcircuit |
| 7548633P3501 | Memory Microcircuit |
| NH295A6403G4 | Memory Microcircuit |
FAQs
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When the NSN 5962-01-386-3127 was assigned to the Federal Catalog?
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