5962-01-383-3736
Find complete technical information, availability, and procurement data for: 5962-01-383-3736
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A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes:light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.
dual-in-line inclosure configuration, -55.0 to 125.0 celsius operating temp range, programmed features provided, prom memory device type, 7.0 volts maximum applied voltage rating and type per characteristic
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Operating Temp Range
- -55.0 to 125.0 celsius
- Features Provided
- programmed
- Inclosure Configuration
- dual-in-line
- Voltage Rating And Type Per Characteristic
- 7.0 volts maximum applied
- Memory Device Type
- prom
- Terminal Type And Quantity
- 18 printed circuit
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 838716-039 | Memory Microcircuit |
| 838716-4899 | Memory Microcircuit |
| HM1-7643A-8 | Memory Microcircuit |
FAQs
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When the NSN 5962-01-383-3736 was assigned to the Federal Catalog?
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