G293514-2
View detailed technical data, stock status, and sourcing information for: G293514-2
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"a microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0"."
radiation hardened iaw esd-82-te-1390b;esd;hci;sh;static,random access memory special features, feat criticality code justification, ram memory device type, milstar end item identification
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- End Item Identification
- milstar
- Criticality Code Justification
- feat
- Memory Device Type
- ram
- Special Features
- radiation hardened iaw esd-82-te-1390b;esd;hci;sh;static,random access memory
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| G293514 | Memory Microcircuit |
| G293514-2 | Memory Microcircuit |
| IDT7188L45EBRT | Memory Microcircuit |
FAQs
Find helpful answers about installation, operation, maintenance, compliance, and troubleshooting.
What is the FSCG of the NSN 5962-01-357-1981?
Does the NSN 5962-01-357-1981 have a Schedule B code assigned?
Does NSN 5962-01-357-1981 require demilitarization?
Does NSN 5962-01-357-1981 contain precious materials?
Does NSN 5962-01-357-1981 contain hazardous materials?
When the NSN 5962-01-357-1981 was assigned to the Federal Catalog?
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